论文信息 - Ultra low power RF section of a passive microwave RFID transponder in 0.35 /spl mu/m BiCMOS

Ultra low power RF section of a passive microwave RFID transponder in 0.35 /spl mu/m BiCMOS

We present the design of the RF section of a long range passive RFID transponder. It consists of a voltage multiplier and a voltage regulator, that convert the RF signal into a regulated DC supply voltage, a PWM demodulator and a PSK backscatter modulator. The entire circuit has been designed with AMS 0.35 /spl mu/m BiCMOS technology. Post-layout simulations show the correct operation of the whole section. The supply voltage generator, which provides a supply voltage of 0.6 V - appropriately regulated for the subthreshold CMOS logic to be used for the digital section - exhibits a power efficiency of 20% in the RF/DC conversion. Proper modulation and demodulation is obtained.

Giuseppe de Vita | Giuseppe Iannaccone

[1] G. Iannaccone,et al. Design criteria for the RF section of UHF and microwave passive RFID transponders , 2005, IEEE Transactions on Microwave Theory and Techniques.

[2] W. Hioe,et al. 0.18-/spl mu/m CMOS Bluetooth analog receiver with -88-dBm sensitivity , 2004, IEEE Journal of Solid-State Circuits.

[3] K. Leung,et al. A CMOS voltage reference based on weighted /spl Delta/V/sub GS/ for CMOS low-dropout linear regulators , 2003 .

[4] Ka Nang Leung,et al. A CMOS Voltage Reference Based on Weighted V GS for CMOS Low-Dropout Linear Regulators , 2001 .

[5] Luca Benini,et al. Scaling into ambient intelligence , 2003, 2003 Design, Automation and Test in Europe Conference and Exhibition.