论文信息 - Correlation between 1/f noise and semiconductor laser degradation

Correlation between 1/f noise and semiconductor laser degradation

The origin of the increase in residual spectral linewidth during device degradation is experimentally and theoretically clarified in a multiple quantum well (MQW) distributed feedback (DFB) laser. Non-radiative recombination current increases during device degradation and causes 1/f noise to increase. This current 1/f noise is the origin of the increase in the residual spectral linewidth. Through these degradation behaviours, a model showing a correlation between 1/f noise and the semiconductor laser degradation is proposed.

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