3D LED and IC wafer level packaging
暂无分享,去创建一个
John H. Lau | Matthew Ming Fai Yuen | Philip C. H. Chan | Philip C. H. Chan | Ricky Lee | J. Lau | M. Yuen | Ricky S. W. Lee
[1] Roshan Weerasekera,et al. Wire-bonded through-silicon vias with low capacitive substrate coupling , 2011 .
[2] John H. Lau,et al. Overview and outlook of through‐silicon via (TSV) and 3D integrations , 2011 .
[3] Siow Pin Tan,et al. Integrated Liquid Cooling Systems for 3-D Stacked TSV Modules , 2010, IEEE Transactions on Components and Packaging Technologies.
[4] Xiaowu Zhang,et al. Development of 3-D Silicon Module With TSV for System in Packaging , 2010, IEEE Transactions on Components and Packaging Technologies.
[5] C. Selvanayagam,et al. Nonlinear Thermal Stress/Strain Analyses of Copper Filled TSV (Through Silicon Via) and Their Flip-Chip Microbumps , 2009, IEEE Transactions on Advanced Packaging.
[6] John H. Lau,et al. Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps , 2009, 2009 59th Electronic Components and Technology Conference.
[7] John H. Lau,et al. Development of through silicon via (TSV) interposer technology for large die (21×21mm) fine-pitch Cu/low-k FCBGA package , 2009, 2009 59th Electronic Components and Technology Conference.
[8] J. Lau,et al. Thermal management of 3D IC integration with TSV (through silicon via) , 2009, 2009 59th Electronic Components and Technology Conference.
[9] John H. Lau,et al. 3D packaging with through ilicon via (TSV) for electrical and fluidic interconnections , 2009, 2009 59th Electronic Components and Technology Conference.
[10] D. Kwong,et al. Study of 15µm pitch solder microbumps for 3D IC integration , 2009, 2009 59th Electronic Components and Technology Conference.
[11] D. Pinjala,et al. Fabrication of Silicon Carriers With TSV Electrical Interconnections and Embedded Thermal Solutions for High Power 3-D Packages , 2009, IEEE Transactions on Components and Packaging Technologies.
[12] D. Pinjala,et al. Fluidic Interconnects in Integrated Liquid Cooling Systems for 3-D Stacked TSV Modules , 2008, 2008 10th Electronics Packaging Technology Conference.
[13] Peter Ramm,et al. 3D Integration: Technology and Applications , 2008 .
[14] V. Lee,et al. Development of 3D silicon module with TSV for system in packaging , 2008, 2008 58th Electronic Components and Technology Conference.
[15] Beom-Hoan O,et al. The effect of KOH and KOH/IPA etching on the surface roughness of the silicon mold to be used for polymer waveguide imprinting , 2008, SPIE OPTO.
[16] Kazuo Sato,et al. Fabrication techniques of convex corners in a (1 0 0)-silicon wafer using bulk micromachining: a review , 2007 .
[17] Michael R. Krames,et al. High-power AlGaInN flip-chip light-emitting diodes , 2001 .
[18] T. T. Veenstra,et al. A light absorption cell for microTAS with KOH/IPA etched 45 degrees mirrors in silicon , 2001 .
[19] Shuji Nakamura,et al. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes , 1997 .
[20] S. Nakamura,et al. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .
[21] Takashi Mukai,et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .
[22] Shuji Nakamura,et al. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes , 1995 .
[23] S. Nakamura,et al. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures , 1995 .
[24] Shuji Nakamura,et al. Growth of InxGa(1−x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes , 1994 .
[25] S. Nakamura,et al. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .
[26] Takashi Mukai,et al. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes , 1993 .
[27] Takashi Mukai,et al. High-Quality InGaN Films Grown on GaN Films , 1992 .
[28] Takashi Mukai,et al. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers , 1992 .
[29] Y. Bäcklund,et al. New shapes in (100) Si using KOH and EDP etches , 1992 .
[30] Takashi Mukai,et al. Hole Compensation Mechanism of P-Type GaN Films , 1992 .
[31] S. Nakamura,et al. Thermal Annealing Effects on P-Type Mg-Doped GaN Films , 1992 .
[32] Takashi Mukai,et al. High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .
[33] S. Nakamura,et al. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers , 1991 .
[34] Shuji Nakamura,et al. GaN Growth Using GaN Buffer Layer , 1991 .
[35] Shuji Nakamura,et al. Novel metalorganic chemical vapor deposition system for GaN growth , 1991 .
[36] H. J. Round. A Note on Carborundum , 1991 .
[37] M. Craford,et al. Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping , 1972 .
[38] N. Holonyak,et al. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .
[39] O. V. Lossev. CII. Luminous carborundum detector and detection effect and oscillations with crystals , 1928 .