A global (volume averaged) model of a Cl2/Ar discharge: I. Continuous power

A global (volume averaged) model is applied to a low pressure (1–100 mTorr) high density chlorine discharge diluted with argon. The model is found to be in fair agreement with measurements reported in the literature. Atomic chlorine is the dominating chlorine species at low pressures and low argon content, but with increasing pressure the discharge becomes less dissociated. As the argon content is increased the chlorine dissociation fraction increases and the decrease with pressure becomes less pronounced. The electronegativity was found to decrease proportionally to the argon dilution for a wide range of discharge conditions. The pressure dependence of the Cl+/n+ fraction was found to vary with argon content, from peaking at low pressures in a pure chlorine discharge to peaking at high pressures in an argon dominated discharge. The electron temperature increases with argon content at low and intermediate pressures but decreases at high pressures. Argon–chlorine reactions generally have only a small effect on the creation or destruction of chlorine particles, even at high argon content, except for the loss of Cl− which is rapidly neutralized by Ar+ ions in an argon dominated discharge. Surface losses are most important for positive ion loss at low pressures and become increasingly important when the chamber is made larger or argon is added to the discharge. Volume losses always dominate the loss of neutral Cl atoms at low pressures, but at moderate to high pressures as well when the chamber is either large or small. Argon dilution benefits the neutral surface losses in small chambers but the volume losses in large chambers.

[1]  P. Španěl,et al.  SIFT studies of the reactions of rare gas atomic ions with Cl2 and Br2 , 1993 .

[2]  P. Calandra,et al.  Electron-impact ionization of the chlorine molecule , 2000 .

[3]  J. Gudmundsson,et al.  A global (volume averaged) model of a chlorine discharge , 2009 .

[4]  A. Efremov,et al.  Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2 ∕ X ( X = Ar , He , N2 ) Inductively Coupled Plasmas , 2008 .

[5]  D. J. Economou,et al.  Effect of Cl2 additions to an argon glow discharge , 1994 .

[6]  P. Španěl,et al.  The reactions of positive and negative halogen ions with Cl2 and Br2 , 1993 .

[7]  V. M. Donnelly,et al.  Recombination of chlorine atoms on plasma-conditioned stainless steel surfaces in the presence of adsorbed Cl2 , 2009 .

[8]  C. Eddy,et al.  Characterization of Cl2/Ar high density plasmas for semiconductor etching , 1999 .

[9]  Sumio Ashida,et al.  Spatially Averaged (Global) Model of Time Modulated High Density Chlorine Plasmas , 1997 .

[10]  Jon Tomas Gudmundsson,et al.  Oxygen discharges diluted with argon: dissociation processes , 2007 .

[11]  P. J. Chantry,et al.  A simple formula for diffusion calculations involving wall reflection and low density , 1987 .

[12]  Rescigno Low-energy electron-collision processes in molecular chlorine. , 1994, Physical review. A, Atomic, molecular, and optical physics.

[13]  R. Piejak,et al.  A Model for the Bulk Plasma in an RF Chlorne Discharge , 1986, IEEE Transactions on Plasma Science.

[14]  J. Gudmundsson,et al.  A global (volume averaged) model of a Cl2/Ar discharge: II. Pulsed power modulation , 2010 .

[15]  R. Basner,et al.  Experimental absolute electron impact ionization cross-sections of Cl2 , 2004 .

[16]  M. A. Ali,et al.  Total ionization cross sections of Cl and Cl2 by electron impact , 2005 .

[17]  B. Cruden,et al.  Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption , 2004 .

[18]  Werner Boullart,et al.  Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments , 2008 .

[19]  J. Horáček,et al.  Dissociative electron attachment and vibrational excitation of the chlorine molecule , 2006 .

[20]  D. J. Pegg,et al.  Electron-impact detachment from Cl - , 2003 .

[21]  M. Kushner,et al.  Two-dimensional modeling of long-term transients in inductively coupled plasmas using moderate computational parallelism. II. Ar/Cl2 pulsed plasmas , 2002 .

[22]  M. Tuszewski Ion and gas temperatures of 0.46 MHz inductive plasma discharges , 2006 .

[23]  L. Christophorou,et al.  Electron Interactions With Cl2 , 1999 .

[24]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing: Lieberman/Plasma 2e , 2005 .

[25]  M. Kurepa,et al.  Electron-chlorine molecule total ionisation and electron attachment cross sections , 1978 .

[26]  Sumio Ashida,et al.  Spatially averaged (global) model of time modulated high density argon plasmas , 1995 .

[27]  I. Fabrikant,et al.  Dissociative attachment and vibrational excitation in low-energy electron collisions with chlorine molecules , 2004 .

[28]  M. V. Malyshev,et al.  Diagnostics of inductively coupled chlorine plasmas : Measurements of the neutral gas temperature , 2000 .

[29]  Michael A. Lieberman,et al.  Improved volume-averaged model for steady and pulsed-power electronegative discharges , 2006 .

[30]  T. Märk,et al.  Calculated cross sections for the electron-impact ionization of excited argon atoms using the DM formalism , 2004 .

[31]  J. Gudmundsson,et al.  A global (volume averaged) model of a nitrogen discharge: I. Steady state , 2009 .

[32]  Vincent M. Donnelly,et al.  Electron temperatures of inductively coupled Cl2-Ar plasmas , 2002 .

[33]  Vincent M. Donnelly,et al.  Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively coupled Cl2–Ar plasmas , 2001 .

[34]  S. Yun,et al.  Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas , 2008 .

[35]  R. Gottscho,et al.  Design of High-Density Plasma Sources for Materials Processing , 1994 .

[36]  N. Sadeghi,et al.  Oxygen and fluorine atom kinetics in electron cyclotron resonance plasmas by time‐resolved actinometry , 1991 .

[37]  A. A. Mityureva,et al.  Electronic excitation of Ar atoms to metastable states and from metastable to higher states , 2004 .

[38]  Uwe Riedel,et al.  Sensitivity studies of silicon etching in chlorine/argon plasmas , 2000 .

[39]  A. Lloyd A critical review of the kinetics of the dissociation-recombination reactions of fluorine and chlorine† , 1971 .

[40]  M. A. Ali,et al.  Electron impact ionization of metastable rare gases: He, Ne and Ar , 2008 .

[41]  David B. Graves,et al.  Global Model of Plasma Chemistry in a High Density Oxygen Discharge , 1993 .

[42]  M. Lieberman,et al.  Global model of Ar, O2, Cl2, and Ar/O2 high‐density plasma discharges , 1995 .

[43]  C. Tun,et al.  Evolution of surface morphology of dry-etched ZnO with Cl2/Ar plasma , 2009 .

[44]  A. Efremov,et al.  Simple model for ion-assisted etching using Cl/sub 2/--Ar inductively coupled plasma: effect of gas mixing ratio , 2004, IEEE Transactions on Plasma Science.

[45]  A. P. Golovitskii Temperature dependence of an electron attachment to chlorine molecules , 2000 .

[46]  Lindsay,et al.  Absolute partial and total cross sections for electron-impact ionization of argon from threshold to 1000 eV. , 1995, Physical review. A, Atomic, molecular, and optical physics.

[47]  Jinho Ahn,et al.  Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma , 2006 .

[48]  D. Graves,et al.  Comparison between fluid simulations and experiments in inductively coupled argon/chlorine plasmas , 2008 .

[49]  David Smith,et al.  Ionic recombination of atomic and molecular ions in flowing afterglow plasmas , 1978 .

[50]  Wetzel,et al.  Absolute electron-impact-ionization cross-section measurements of the halogen atoms. , 1987, Physical review. A, General physics.