论文信息 - Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (~50μm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.

F.-M Kuo | J.-W Shi | Z.-Y Wu

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