AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
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W. Knap | S. Rumyantsev | M. Sakowicz | P. Prystawko | D. But | G. Cywiński | I. Yahniuk | P. Wisniewski | A. Khachapuridze | K. Nowakowski-Szkudlarek | M. Słowikowski | P. Wiśniewski | W. Knap | P. Kruszewski | M. Grabowski | J. Przybytek | B. Stonio | P. Sai | D. B. But