P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
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E. Monroy | P. Ruterana | K. Kheng | L. Redaelli | S. Valdueza-Felip | M. Chauvat | A. Ajay | T. Cremel | M. Jim'enez-Rodr'iguez