A Compelet Design Procedure of an X-band MMIC Class-J Power Amplifier

This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the ${0.25-\mu m}$ A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is ${0.9mm^{2}}$.