Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Formation of defects in semipolar (11¯01)-oriented GaN layers grown by metal-organic chemical vapor deposition on patterned Si (001) substrates and their effects on optical properties were investigated by steady-state and time-resolved photoluminescence (PL) and spectrally and spatially resolved cathodoluminescence (CL). Near-band edge emission is found to be dominant in the c+-wings of semipolar (11¯01)GaN, which are mainly free from defect-related emission lines, while the c– wings contain a large number of basal stacking faults. When the advancing c+ and c— fronts meet to coalesce into a continuous film, the existing stacking faults contained in c— wings continue to propagate in the direction perpendicular to the c-axis and, as a result, the region dominated by stacking fault emission is extended to the film surface. Additional stacking faults are observed within the c+ wings, where the growing c+ wings of GaN are in contact with the SiO2 masking layer. Out-diffusion of oxygen/silicon species and conce...

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