论文信息 - Delayed interferometer based Si-wire WDM demultiplexers fabricated by phase controllable and productive 300-mm wafer-scale ArF-immersion lithography technology

Delayed interferometer based Si-wire WDM demultiplexers fabricated by phase controllable and productive 300-mm wafer-scale ArF-immersion lithography technology

We report good phase controllability and high production yield in Si-wire delayed interferometer-type demultiplexers fabricated by 300-mm wafer-scale ArF-immersion lithography technologies. The results are promising for utilization in high-density WDM interconnects.

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