Characterization of Boron Carbonitride (BCN) Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

Boron carbonitride (BCN) thin films with a thickness of ~4 µm were synthesized on Si (100) substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH3)3N.BH3)] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze the chemical bonding state and composition of the films. It has been observed that the films were adhered well to the silicon substrate even after being broken mechanically. XRD and FESEM results showed that the films were x-ray amorphous, rough surface with inhomogeneous microstructure. The micro hardness was measured by nano-indentation tester and was found to be approximately 2~7 GPa. FT-IR suggested the formation of the hexagonal boron carbonitride (h-BCN) phase in the films. Broadening of the XPS peaks revealed that B, C and N atoms have different chemical bonds such as B-N, B-C and C-N. The impurity oxygen was detected (13~15 at.%) as B-O and/or N-O.

[1]  O. Meyer,et al.  The modification of mechanical properties and adhesion of boron carbide sputtered films by ion implantation , 1996 .

[2]  J. D. Wu,et al.  Preparation of thin films of carbon-based compounds , 2003 .

[3]  M. Nagano,et al.  Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition , 2005 .

[4]  J. Fierro,et al.  Structural and chemical analysis of amorphous B–N–C thin films deposited by RF sputtering , 2005 .

[5]  L. Hultman,et al.  Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance , 2002 .

[6]  Y. Kakudate,et al.  Influence of raw gases on B-C-N films prepared by electron beam excited plasma CVD , 2003 .

[7]  M. Nagano,et al.  B–C–N hybrid synthesis by high-temperature ion implantation , 2005 .

[8]  S. Mikhailov,et al.  a-C:H thin films deposited by radio-frequency plasma: influence of gas composition on structure, optical properties and stress levels , 2001 .

[9]  P. Oelhafen,et al.  Bonding characteristics of DC magnetron sputtered B–C–N thin films investigated by Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy , 2004 .

[10]  J. Esteve,et al.  Preparation of BCN thin films by r.f. plasma assisted CVD , 1998 .

[11]  A. Luches,et al.  Structural and compositional study of B-C-N films produced by laser ablation of B4C targets in N2 atmosphere , 2000 .

[12]  Satoshi Itoh,et al.  Proposed synthesis path for heterodiamond BC 2 N , 1997 .

[13]  J. Albella,et al.  BCN films with controlled composition obtained by the interaction between molecular beams of B and C with nitrogen ion beams , 2003 .

[14]  Maria Dinescu,et al.  Boron carbonitride films deposited by pulsed laser ablation , 1998 .

[15]  Yingai Li,et al.  Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering , 2006 .

[16]  D. Zahn,et al.  Cubic boron nitride films by d.c. and r.f. magnetron sputtering: layer characterization and process diagnostics , 1996 .

[17]  C. Morant,et al.  Hard BCxNy thin films grown by dual ion beam sputtering , 2006 .

[18]  M. Dinescu,et al.  Boron carbon nitride films deposited by sequential pulses laser deposition , 1998 .

[19]  R. Riedel,et al.  Influence of single-source precursors on PACVD-derived boron carbonitride thin films , 1999 .

[20]  M. Mieno,et al.  Study of BCN compounds prepared by the chemical vapor deposition with dimethylamineborane , 2001 .

[21]  Miyoko O. Watanabe,et al.  Bonding characterization of BC2N thin films , 1996 .

[22]  T. Sugino,et al.  Electrical and optical characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition , 2004 .

[23]  X. Zhong,et al.  Room-temperature growth of cubic nitride boron film by RF plasma enhanced pulsed laser deposition , 2003 .