Development and Application of the Self-power Emitter Turn-Off (SPETO) Thyristor.

CHEN, QIAN. Development and Application of the Self-power Emitter Turn-Off (SPETO) Thyristor. (Under the direction of Alex Q. Huang.) The self-power emitter turn-off thyristor (SPETO) is a GTO-MOSFET hybrid high power device that has high current turn-off capability. A SPETO rated at 4.5 kV and 4 kA has been developed and is suitable for high power and high frequency applications. With the selfpower function, neither external power supply nor isolation transformer is required for SPETO gate drive in high voltage applications. This dissertation focuses on the improvement of the SPETO gate drive, series operation of SPETOs, a SPETO based circuit breaker for power distribution system, and a SPETO based H-bridge for 10 MVA STATCOM. Self-power function can not obtain power when an anti-parallel diode is conducting the current. Moreover, waveform distortion appears on the load side when self-power circuit works during SPETO on-state. To reduce the power consumption of SPETO gate drive hence to mitigate the self-power limitation and waveform distortion, several circuits for GTO onstate gate current are introduced and discussed. A novel low loss circuit with two controllers is proposed. The experimental results show the novel circuit is suitable for an anode shorted GTO and consumes less power than that of other circuits. Due to self-power circuit, the variation of SPETO leakage current is much larger than that of other conventional switching device, which is an impediment to achieving static voltage balance. The existing approaches for static voltage balance are introduced and discussed. A compensating circuit is proposed to decrease the variation of SPETO leakage current. With the proposed circuit, SPETO is like a conventional switching device from the leakage current

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