论文信息 - Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics - 字舞流文

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics

Arkadiusz Szewczyk | Gérard Ghibaudo | Frederic Monsieur | B. Cretu | M. Fadlallah | Jalal Jomaah | C. Giannakopoulos | T. Devoivre