Solid-State Pulsed Power Modulators and Capacitor Charging Applications

This chapter provides basic concepts and advanced technologies to generate repetitive high-voltage pulses using state-of-the-art power semiconductors. It starts with a review of power semiconductor devices used in solid-state-based high-voltage generators, including the newest silicon carbide (SiC) insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), and the latest gallium nitride (GaN) enhancement-mode high-electron-mobility transistor (E-HEMT). Several types of pulsed power applications are presented and their high-voltage modulator requirements are described. The most widespread semiconductor-based HV unipolar and bipolar pulse modulator topologies are analyzed, and solid-state device operation is explained. Capacitor charging applications are also presented.

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