Silicon carbide coated MEMS strain sensor for harsh environment applications

We present poly-SiC coating and subsequent operation of a Si-based double-ended tuning fork (DETF) resonant strain sensor fabricated in the Bosch commercial foundry process. The coating is applied post release and, hence, has minimal impact on the front end of the microfabrication process. The deposition thickness of nanometer-thin SiC coating was optimized to provide enhanced corrosion resistance to silicon MEMS without compromising the electrical and mechanical performance of the original device. The coated DETF achieves a strain resolution of 0.2 mue in a 10 Hz to 20 kHz bandwidth, which is comparable to the uncoated device. The coated DETF is locally heated with an IR lamp and is shown to operate up to 190 degC in air with a temperature sensitivity of -7.6 Hz/degC. The devices are also dipped in KOH at 80 degC for 5 minutes without etching the structures, confirming the poly-SiC coating provides a sufficient chemical barrier to the underlying silicon. The results demonstrate that SiC-coated poly-Si devices are an effective bridge between poly-Si and full poly-SiC films for applications requiring a high level of corrosion resistance and moderate operating temperatures (up to 200 degC) without compromising the performance characteristics of the original poly-Si device.

[1]  C.J.M. Verhoeven,et al.  Resonance-mode selection and crosstalk elimination using resonator-synchronised relaxation oscillators , 1998, Proceedings of the 24th European Solid-State Circuits Conference.

[2]  M. Mehregany,et al.  Growth of polycrystalline SiC films on SiO2 and Si3N4 by APCVD , 1999 .

[3]  R. Maboudian,et al.  Tribological Impact of SiC Encapsulation of Released Polycrystalline Silicon Microstructures , 2004 .

[4]  B. Boser,et al.  A MEMS resonant strain sensor operated in air , 2004, 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest.

[5]  BRIEF COMMUNICATION: Control of strain gradient in doped polycrystalline silicon carbide films through tailored doping , 2006 .

[6]  C. Carraro,et al.  Recent progress toward a manufacturable polycrystalline SiC surface micromachining technology , 2004, IEEE Sensors Journal.

[7]  R. Howe,et al.  Fully-differential poly-SiC Lame mode resonator and checkerboard filter , 2005, 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005..

[8]  G. A. Slack,et al.  Thermal expansion of some diamondlike crystals , 1975 .

[9]  W. Sharpe,et al.  Fracture strength of silicon carbide microspecimens , 2005, Journal of Microelectromechanical Systems.

[10]  Mitsuhiro Shikida,et al.  Mechanical properties of a micron-sized SCS film in a high-temperature environment , 2006 .

[11]  Muthu B. J. Wijesundara,et al.  Nitrogen doping of polycrystalline 3C-SiC films grown using 1,3-disilabutane in a conventional LPCVD reactor , 2003 .