MONTE CARLO SIMULATION OF 94
暂无分享,去创建一个
[1] P. Rolland,et al. Optimum design of n+-n-n+InP devices in the millimeter-range frequency limitation—RF performances , 1983, IEEE Electron Device Letters.
[2] G. S. Hobson,et al. The Gunn effect , 1974 .
[3] Heribert Eisele,et al. D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz , 1994 .
[4] G. I. Haddad,et al. High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz) , 1995 .
[5] M. Zybura,et al. Efficient computer aided design of GaAs and InP millimeter wave transferred electron devices including detailed thermal analysis , 1995 .
[6] A. Walker,et al. Monte Carlo simulation of InP and GaAs MESFETs , 1994 .
[7] M. Fischetti. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport , 1991 .