Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum.

[1]  S. Brückner,et al.  Anomalous double-layer step formation on Si(100) in hydrogen process ambient , 2012 .

[2]  I. Rey‐Stolle,et al.  In situ control of As dimer orientation on Ge(100) surfaces , 2012 .

[3]  M. Pristovsek,et al.  In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces , 2012 .

[4]  I. Rey‐Stolle,et al.  Ge(100) surfaces prepared in vapor phase epitaxy process ambient , 2012 .

[5]  S. Brückner,et al.  In situ investigation of hydrogen interacting with Si(100) , 2011 .

[6]  G. Capellini,et al.  Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices , 2011, Nanotechnology.

[7]  P. Kleinschmidt,et al.  Atomic surface structure of Si(1 0 0) substrates prepared in a chemical vapor environment , 2010 .

[8]  S. Brückner,et al.  Si(100) surfaces in a hydrogen-based process ambient , 2010 .

[9]  G. Capellini,et al.  Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy , 2009, Nanotechnology.

[10]  O. Pluchery,et al.  Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si(100) surface: Combined experimental and theoretical study , 2009 .

[11]  I. Rey‐Stolle,et al.  Analysis of germanium epiready wafers for III–V heteroepitaxy , 2008 .

[12]  H. Döscher,et al.  In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy , 2008 .

[13]  H. Kim,et al.  Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate , 2004, IEEE Electron Device Letters.

[14]  S. Visbeck,et al.  Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques , 2004 .

[15]  H. Zandvliet.  The Ge(0 0 1) surface , 2003 .

[16]  J. Y. Lee,et al.  Kinetics of H2 (D2) desorption from a Ge(100)-2×1:H (D) surface studied using scanning tunneling microscopy and temperature programmed desorption , 2003 .

[17]  J. Y. Lee,et al.  Surface dihydrides on Ge(100): A scanning tunneling microscopy study , 2002 .

[18]  Peter Weightman,et al.  Reflection anisotropy spectroscopy , 2005 .

[19]  F. Bechstedt,et al.  Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP ( 001 ) ( 2 × 4 ) , 2000 .

[20]  R. Hamers,et al.  Preparation of clean and atomically flat germanium (001) surfaces , 1999 .

[21]  R. Shioda,et al.  Observation of hydrogen adsorption on Si(001) by reflectance difference spectroscopy , 1998 .

[22]  B. Swartzentruber,et al.  Spontaneous formation of an ordered c(4×2)-(2×1) domain pattern on Ge(001) , 1998 .

[23]  R. Hicks,et al.  Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces , 1998 .

[24]  Jh.-T Zettler,et al.  Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry , 1997 .

[25]  A. Shkrebtii,et al.  Theoretical and Experimental Optical Spectroscopy Study of Hydrogen Adsorption at Si(111)-( 7 × 7 ) , 1996 .

[26]  Northrup,et al.  Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001). , 1996, Physical review letters.

[27]  L. Mantese,et al.  Surface-induced optical anisotropy of Si and Ge , 1996 .

[28]  W. Richter,et al.  Reflectance anisotropy on a metal surface : rhodium (110) , 1995 .

[29]  K. Janda,et al.  Recombinative desorption of hydrogen from the Ge(100)–(2×1) surface: A laser‐induced desorption study , 1995 .

[30]  Yasuda,et al.  Surface-Induced Optical Anisotropies of Single-Domain (2 x 1) Reconstructed (001) Si and Ge Surfaces. , 1995, Physical review letters.

[31]  J. Sharp,et al.  Investigation of the kinetics of digermane chemisorption and reaction product desorption in thin film growth of germanium , 1993 .

[32]  J. Boland.  Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces , 1993 .

[33]  Stephen M. Cohen,et al.  Surface π bonding and the near‐first‐order desorption kinetics of hydrogen from Ge(100)2×1 , 1993 .

[34]  J. Sharp,et al.  Real‐time monitoring of a surface reaction in germanium film growth , 1992 .

[35]  Y. Chabal.  High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: Hydrogen on Si(100) and Ge(100) , 1986 .