Phonon and polarized reflectance spectra fromSi(111)−(4×1)In: Evidence for a charge-density-wave driven phase transition

The (4×1)→(4×"2") phase transition of the In terminated Si(111) surface around 120 K has been investigated by optical spectroscopy. Characteristic surface phonon modes of the 4X 1 and 4X "2" phases are observed with Ramanspectroscopy. Reflectance anisotropy spectroscopy (RAS) reveals a splitting of a large feature in the optical anisotropy at 2 eV on formation of the low temperature phase. The changes in the RAS and Raman spectra are discussed within the framework of the conflicting models of the phase transition. Charge density wave formation driven by a Peierls transition is favored over transitions involving significant structural modifications.

[1]  Wakio Uchida,et al.  Angle-resolved high-resolution electron-energy-loss study of In-adsorbed Si(111)-(4×1) and -(8×2) surfaces , 2000 .

[2]  Kanta Ono,et al.  Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface , 2002 .

[3]  Tadaaki Nagao,et al.  INSTABILITY AND CHARGE DENSITY WAVE OF METALLIC QUANTUM CHAINS ON A SILICON SURFACE , 1999 .

[4]  J. Fritsch.  Phonons in low-dimensional systems , 2001 .

[5]  Su,et al.  Low-temperature structure of indium quantum chains on silicon , 2000, Physical review letters.

[6]  W. Richter,et al.  Reflectance Anisotropy Spectroscopy of Si(111)-(4 × 1)-In , 2001 .

[7]  R. Feidenhans'l,et al.  Structure determination of the indium-induced Si ( 111 ) − ( 4 × 1 ) reconstruction by surface x-ray diffraction , 1999, cond-mat/9909286.

[8]  G. P. Srivastava,et al.  Atomic geometry, electronic structure and image state for the Si(111)–In(4×1) nanowire , 2001 .

[9]  Aspnes,et al.  Anisotropies in the above-bandgap optical spectra of cubic semiconductors. , 1985, Physical review letters.

[10]  P. Weightman,et al.  Evidence of electron confinement in the single-domain (4×1)-In superstructure on vicinal Si(111) , 1998 .

[11]  Goovaerts,et al.  Temperature variation of the ESR parameters of the self-trapped-electron center in PbCl2. , 1995, Physical review. B, Condensed matter.

[12]  M. Kakihana,et al.  Effect of A - and B -cation substitutions on the phase stability of PbTiO 3 ceramics , 1999 .

[13]  F. Netzer,et al.  SURFACE RECONSTRUCTIONS OF IN ON SI(111) , 1997 .

[14]  T. Nagao,et al.  Phase transition and stability of Si(111)-8 × '2'-In surface phase at low temperatures , 2001 .

[15]  J. Fritsch,et al.  Ab initio calculation of the structure, electronic states, and the phonon dispersion of the Si(100) surface , 1995 .

[16]  Toyohiko Kinoshita,et al.  Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study , 1995 .

[17]  M. Aono,et al.  Anisotropic electronic structure of the Si ( 111 ) − ( 4 × 1 ) In surface , 2001 .

[18]  J. McGilp.  Optical Response of Low-Dimensional In Nanostructures Grown by Self-Assembly on Si Surfaces , 2001 .

[19]  P. Segovia,et al.  A system with a complex phase transition: Indium chains on Si(111) , 2001 .

[20]  P. Temple,et al.  Multiphonon Raman Spectrum of Silicon , 1973 .

[21]  Ian G. Hill,et al.  Strongly Anisotropic Band Dispersion of an Image State Located above Metallic Nanowires , 1999 .

[22]  V. Safarov,et al.  Optical transitions on GaAs [110] surface , 1985 .