ZnSe/GaAs epitaxial film modification by soft x-ray irradiation

The possibility of ZnSe/GaAs epitaxial layer enhancing by means of soft X-ray irradiation is reported. High intensity soft X-rays in waverange 80-120 A are produced by laser plasma source with waveguide X-ray optics. The X-ray diffraction data and photoluminescence spectra excited by He-Cd laser (T=4.2 K) are represented.