Electrical properties and diffusion behavior of hafnium in single crystal silicon
暂无分享,去创建一个
[1] G. Bersuker,et al. Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices , 2005, IEEE Transactions on Nuclear Science.
[2] M. Ratzke,et al. Pulsed Laser Deposition of Hafnium Oxide on Silicon , 2005 .
[3] Yunzhi Wang,et al. In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition , 2005 .
[4] A. Veloso,et al. PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application , 2005 .
[5] E. Weber,et al. Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV , 2005 .
[6] Dan Zhou,et al. Diffusion profiles of high dosage Cr and V ions implanted into silicon , 2004 .
[7] Young-Hee Kim,et al. Reliability characteristics of high-k dielectrics , 2004, Microelectron. Reliab..
[9] T. Ma,et al. Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics , 2004, IEEE Transactions on Electron Devices.
[10] E. Yakimov,et al. Hydrogen penetration into silicon during wet-chemical etching , 2003 .
[11] J. Bernholc,et al. Surface segregation of Ge at SiGe(001) by concerted exchange pathways. , 2002, Physical review letters.
[12] J. L. Duggan,et al. Hafnium interdiffusion studies from hafnium silicate into silicon , 2001 .
[13] S. Balasubramanian,et al. Gettering simulator: physical basis and algorithm , 2001 .
[14] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[15] H. Bracht. Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon , 2000 .
[16] M. Kakihana,et al. Materials Research Society Symposium - Proceedings , 2000 .
[17] A. Janotti,et al. Concerted-exchange mechanism for antistructure pair defects in GaAs , 1999 .
[18] W. Chu,et al. Rutherford backscattering spectrometry: reminiscences and progresses , 1996 .
[19] Peter Blood,et al. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .
[20] H. Lemke. Properties of Silicon Crystals Doped with Zirconium or Hafnium , 1990 .
[21] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[22] J. Utzig. An elastic energy approach to the interstitial diffusion of 3d elements in silicon , 1989 .
[23] G. J. Dienes,et al. An Introduction to Solid State Diffusion , 1988 .
[24] Dienes Gj,et al. Comment on "Diffusion without vacancies or interstitials: A new concerted exchange mechanism , 1987 .
[25] Pandey. Diffusion without vacancies or interstitials: A new concerted exchange mechanism. , 1986, Physical review letters.
[26] P. Griffin,et al. Point defects and dopant diffusion in silicon , 1989 .
[27] Eicke R. Weber,et al. Transition metals in silicon , 1983 .
[28] Karl Hess,et al. Electric field enhanced emission from non‐Coulombic traps in semiconductors , 1981 .
[29] D. Lang,et al. Complex nature of gold-related deep levels in silicon , 1980 .
[30] S. Murarka,et al. Thermal oxidation of hafnium silicide films on silicon , 1980 .
[31] O. Engström,et al. Thermodynamical analysis of optimal recombination centers in thyristors , 1978 .
[32] M. Nicolet,et al. Principles and applications of ion beam techniques for the analysis of solids and thin films , 1973 .
[33] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .