Electrical properties and diffusion behavior of hafnium in single crystal silicon

[1]  G. Bersuker,et al.  Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices , 2005, IEEE Transactions on Nuclear Science.

[2]  M. Ratzke,et al.  Pulsed Laser Deposition of Hafnium Oxide on Silicon , 2005 .

[3]  Yunzhi Wang,et al.  In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition , 2005 .

[4]  A. Veloso,et al.  PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application , 2005 .

[5]  E. Weber,et al.  Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV , 2005 .

[6]  Dan Zhou,et al.  Diffusion profiles of high dosage Cr and V ions implanted into silicon , 2004 .

[7]  Young-Hee Kim,et al.  Reliability characteristics of high-k dielectrics , 2004, Microelectron. Reliab..

[8]  Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation , 2004 .

[9]  T. Ma,et al.  Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics , 2004, IEEE Transactions on Electron Devices.

[10]  E. Yakimov,et al.  Hydrogen penetration into silicon during wet-chemical etching , 2003 .

[11]  J. Bernholc,et al.  Surface segregation of Ge at SiGe(001) by concerted exchange pathways. , 2002, Physical review letters.

[12]  J. L. Duggan,et al.  Hafnium interdiffusion studies from hafnium silicate into silicon , 2001 .

[13]  S. Balasubramanian,et al.  Gettering simulator: physical basis and algorithm , 2001 .

[14]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[15]  H. Bracht Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon , 2000 .

[16]  M. Kakihana,et al.  Materials Research Society Symposium - Proceedings , 2000 .

[17]  A. Janotti,et al.  Concerted-exchange mechanism for antistructure pair defects in GaAs , 1999 .

[18]  W. Chu,et al.  Rutherford backscattering spectrometry: reminiscences and progresses , 1996 .

[19]  Peter Blood,et al.  The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .

[20]  H. Lemke Properties of Silicon Crystals Doped with Zirconium or Hafnium , 1990 .

[21]  D. Schroder Semiconductor Material and Device Characterization , 1990 .

[22]  J. Utzig An elastic energy approach to the interstitial diffusion of 3d elements in silicon , 1989 .

[23]  G. J. Dienes,et al.  An Introduction to Solid State Diffusion , 1988 .

[24]  Dienes Gj,et al.  Comment on "Diffusion without vacancies or interstitials: A new concerted exchange mechanism , 1987 .

[25]  Pandey Diffusion without vacancies or interstitials: A new concerted exchange mechanism. , 1986, Physical review letters.

[26]  P. Griffin,et al.  Point defects and dopant diffusion in silicon , 1989 .

[27]  Eicke R. Weber,et al.  Transition metals in silicon , 1983 .

[28]  Karl Hess,et al.  Electric field enhanced emission from non‐Coulombic traps in semiconductors , 1981 .

[29]  D. Lang,et al.  Complex nature of gold-related deep levels in silicon , 1980 .

[30]  S. Murarka,et al.  Thermal oxidation of hafnium silicide films on silicon , 1980 .

[31]  O. Engström,et al.  Thermodynamical analysis of optimal recombination centers in thyristors , 1978 .

[32]  M. Nicolet,et al.  Principles and applications of ion beam techniques for the analysis of solids and thin films , 1973 .

[33]  R. C. Weast CRC Handbook of Chemistry and Physics , 1973 .