Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance
暂无分享,去创建一个
[1] D. Muller,et al. Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4 , 2014 .
[2] Nobuto Oka,et al. Study on reactive sputtering to deposit transparent conductive amorphous In2O3–ZnO films using an In–Zn alloy target , 2014 .
[3] Shunpei Yamazaki,et al. Properties of crystalline In–Ga–Zn-oxide semiconductor and its transistor characteristics , 2014 .
[4] Y. Shigesato,et al. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process , 2013 .
[5] T. Yagi,et al. Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films , 2013 .
[6] Tatsutoshi Shioda,et al. Application of dual-heterodyne mixing to optical phase-shift keying , 2013 .
[7] T. Kamiya,et al. Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O , 2012 .
[8] T. Kamiya,et al. Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors , 2012 .
[9] Aron Walsh,et al. Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory , 2010 .
[10] Yasushi Sato,et al. DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction , 2010 .
[11] T. Kamiya,et al. Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing , 2010 .
[12] T. Kamiya,et al. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* , 2009, Journal of Display Technology.
[13] Hideo Hosono,et al. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing , 2008 .
[14] Hideo Hosono,et al. Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O , 2007 .
[15] T. Kamiya,et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .
[16] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.