A DECT transceiver chip set using SiGe technology

A fully-integrated RF-transceiver for DECT comprises two bipolar ICs including power amplifier, low-noise amplifier and VCO. Nonblind-slot and multi-slot capability is achieved by closed-loop modulation. The complete transceiver, which operates from 2.7 to 5 V, avoids mechanical tuning, and requires <50 external components.

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