论文信息 - Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Prototype SiC bipolar diodes for 300A/4500V with 3.1V forward voltage prove the SiC power device performance. However, forward voltage degradation prevents industrial application. Electrical statistics are given, and the phenomenon is described by sequencing stacking fault expansion during current conduction. The sources for these faults are identified by electro luminescence to be dissociated dislocations, likely replicated from the substrate. The identification is benchmarked against KOH etch pit patterns and X-ray back reflection topographs. A variety of buffer layers to suppress the propagation of source defects from the substrate showed small improvements.

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