论文信息 - Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 µm - 字舞流文

Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 µm

M. Asada | S. Arai | Y. Suematsu | Y. Itaya

[1] S. Arai,et al. Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µm , 1978 .