论文信息 - 57–67-GHz Highly Compact Bidirectional 3-Bit Phase Shifter in 28-nm CMOS

57–67-GHz Highly Compact Bidirectional 3-Bit Phase Shifter in 28-nm CMOS

This letter describes a highly compact, low-loss, high-bandwidth, bidirectional, passive 3-bit phase shifter (PS) implementation for 5G and WiGig applications at 57–67 GHz, fabricated in Taiwan Semiconductor Manufacturing Company 28-nm CMOS technology. First, a highly compact, differential quadrature hybrid coupler is used for the I/Q generation. Consuming only 0.006 mm2, it achieves 4.5-dB insertion loss (IL) with less than 1-dB amplitude imbalance, and 6° I/Q phase imbalance, for the entire frequency band. The hybrid coupler is followed by a novel compact transistors switching matrix to create the 3-bit, bidirectional, 360° PS, which provides impedance matching for all states. It consumes the smallest ever reported PS chip area of only 0.007 mm2 with state-of-the-art results of the maximum rms phase and gain errors of 6.3° and 0.94 dB, respectively. The measured IL was 10.8 dB between 57 and 67 GHz.

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