LOW-RESISTIVITY TRANSPARENT IN2O3 FILMS PREPARED BY REACTIVE ION PLATING

Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x‐ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.

[1]  T. Ma,et al.  High‐quality transparent conductive indium oxide films prepared by thermal evaporation , 1980 .

[2]  J. Manifacier,et al.  Thin metallic oxides as transparent conductors , 1982 .

[3]  T. Kuwana,et al.  X-ray photoelectron/Auger electron spectroscopic studies of tin and indium metal foils and oxides , 1977 .

[4]  R. L. Weiher,et al.  Optical Properties of Indium Oxide , 1966 .

[5]  Yeonhee Lee,et al.  Analysis of TiC and TiN films prepared by an arc-induced ion plating , 1991 .

[6]  I. Hamberg,et al.  Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows , 1986 .

[7]  C. Granqvist,et al.  Transparent and heat-reflecting indium tin oxide films prepared by reactive electron beam evaporation , 1982 .

[8]  D. Laser.  Properties of indium oxide films prepared by the reactive evaporation of indium , 1982 .

[9]  K. Chopra,et al.  Transparent conductors—A status review , 1983 .

[10]  G. Cheek,et al.  Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications , 1979 .

[11]  C. Wickersham,et al.  The effect of substrate bias on the electrical and optical properties of In2O3 films grown by RF sputtering , 1978 .

[12]  J. Manifacier,et al.  In2O3 : (Sn) and SnO2 : (F) films - application to solar energy conversion part II — Electrical and optical properties , 1979 .

[13]  H. Sakata,et al.  Electrical properties of undoped In2O3 films prepared by reactive evaporation , 1980 .

[14]  Y. Bandō,et al.  Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 films , 1987 .