论文信息 - Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory - 字舞流文

Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

T. Tseng | D. Panda | Chun-Chieh Lin | S. Chandrasekaran | F. Simanjuntak | R. Aluguri | F. M. Simanjuntak