Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
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Charles W. Tu | K. Kavanagh | C. Tu | H. Xin | Karen L. Kavanagh | H. P Xin
[1] T. Matsuoka. Current Status of GaN and Related Compounds, as Wide-Gap Semiconductors , 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.
[2] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[3] Ferreira,et al. First-principles calculation of alloy phase diagrams: The renormalized-interaction approach. , 1989, Physical review. B, Condensed matter.
[4] L. Tiemeijer,et al. Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP , 1992 .
[5] K. Uomi,et al. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes , 1998, IEEE Photonics Technology Letters.
[6] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .
[7] N. Dutta,et al. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination , 1981 .
[8] H. Imai,et al. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers , 1981 .
[9] K. Uomi,et al. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers , 1998, IEEE Photonics Technology Letters.
[10] J. C. Phillips. Bonds and Bands in Semiconductors , 1970, Science.
[11] A. Ougazzaden,et al. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments , 1998 .
[12] Y. Osawa,et al. Room-temperature pulsed operation of 1.3 /spl mu/m GaInNAs/GaAs laser diode , 1997 .
[13] K. Kavanagh,et al. Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells , 1999 .
[14] V. Speriosu,et al. X‐ray rocking curve analysis of superlattices , 1984 .