Comparative low frequency noise analysis in various SOI devices: floating body, body-tied, DTMOS with and without current limiter

Low frequency noise (LFN) in N-channel floating-body, body-tied and dynamic threshold (DTMOS) devices on Unibond SOI substrates is investigated. The LFN is analyzed in both ohmic and saturation regions. We show that the DTMOS transistors present the best behavior in term of noise compared to the other investigated devices.

[1]  O. Faynot,et al.  SOI technology performance and modelling , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[2]  T. Sugii,et al.  Fmax enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[3]  Jeffrey Bokor,et al.  Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI , 1997 .

[4]  Gerard Ghibaudo,et al.  A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs , 1987 .

[5]  O. Faynot,et al.  Detailed Analysis of Short-Channel SOI DT-MOSFET , 1999, 29th European Solid-State Device Research Conference.