论文信息 - The effect of collector resistance upon the high current capability of n-p-ν-n transistors

The effect of collector resistance upon the high current capability of n-p-ν-n transistors

It is shown that the onset of conductivity modulation of the bulk collector resistance causes an abrupt decrease in h FE at high current density and consequently limits the current range in which a transistor exhibits usable gain. Data are presented which demonstrate the accurate measurement of equilibrium collector resistance from a curve-tracer display. Experimental results showing the effect of partial saturation upon transistor switching time are also presented. Recognition of this phenomenon suggests a reappraisal of the importance of other potential causes of high current h FE decrease.

L. A. Hahn | L. Hahn

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