Novel molecular resist based on derivative of cholic acid
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Glycerol tris(glutarate 3-(tert-butyl cholate) ester) was synthesized as a low molecular weight amorphous resist material for 193-nm lithography, and it has good transmittance at 193 nm and good dry etch resistance to CF4 reactive ion etching. The resist formulated with this material forms well defined line and space patterns at a dose of 12 mJ cm−2 using a mercury-xenone lamp in a contact printing mode.
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