Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

The effect of neutron irradiation on the electrical properties of undoped n-AlGaN∕GaN heterostructures is reported. The two-dimensional electron-gas (2DEG) mobility starts to decrease at neutron doses above 1014cm−2, while the 2DEG concentration slightly increases at low doses and decreases dramatically for doses higher than 2.5×1016cm−2. The result is that the mobility/concentration product (a figure of merit for transistors) starts to decrease appreciably after the dose of 1015cm−2. Capacitance-voltage and admittance spectroscopies, indicate that tunneling of electrons into the states near Ec−0.21eV in AlGaN is a serious factor when cooling down the virgin or lightly irradiated samples. For heavily irradiated samples the states in AlGaN are close to 0.3 and 0.45eV, respectively, from the bottom of the conduction band. Deep-level spectroscopy measurements reveal the presence of hole traps with apparent activation energies of 0.18 and 0.21eV for lightly irradiated samples and deeper hole traps with activa...

[1]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2]  A. Mircea,et al.  Detailed electrical characterisation of the deep Cr acceptor in GaAs , 1980 .

[3]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[4]  Ferdinand Scholz,et al.  Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN , 1996 .

[5]  Ferdinand Scholz,et al.  Optical detection of magnetic resonance in electron-irradiated GaN , 1997 .

[6]  D. C. Reynolds,et al.  Defect Donor and Acceptor in GaN , 1997 .

[7]  David C. Look,et al.  Deep centers in n-GaN grown by reactive molecular beam epitaxy , 1998 .

[8]  Michael Stavola,et al.  Identification of defects in semiconductors , 1998 .

[9]  David W. Greve,et al.  Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy , 1998 .

[10]  N. B. Smirnov,et al.  Deep centers in AlGaN-based light emitting diode structures , 1999 .

[11]  N. B. Smirnov,et al.  Effects of proton implantation on electrical and recombination properties of n-GaN , 2000 .

[12]  Pierre Gibart,et al.  Radiation induced defects in MOVPE grown n-GaN , 2000 .

[13]  V. V. Emtsev,et al.  Radiation-induced defects in n-type GaN and InN , 2001 .

[14]  Amir Dabiran,et al.  dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors , 2001 .

[15]  A. Houdayer,et al.  Radiation hardness of gallium nitride , 2002 .

[16]  Patrick Fournier,et al.  Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system , 2002 .

[17]  J. Kim,et al.  Electrical and optical properties of GaN films implanted with Mn and Co , 2002 .

[18]  Amir Dabiran,et al.  Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors , 2002 .

[19]  Ching‐Wu Wang.  Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes , 2002 .

[20]  peixiong zhao,et al.  Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy , 2002 .

[21]  F. Ren,et al.  Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors , 2003 .

[22]  S. Khanna,et al.  Proton energy dependence of the light output in gallium nitride light emitting diodes , 2004, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[23]  Umesh K. Mishra,et al.  Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors , 2003 .

[24]  John M. Zavada,et al.  Proton implantation effects on electrical and luminescent properties of p-GaN , 2003 .

[25]  Ronald D. Schrimpf,et al.  Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence , 2003 .

[26]  N. B. Smirnov,et al.  Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors , 2003 .

[27]  S. Subramanian,et al.  Neutron irradiation effects in GaN-based blue LEDs , 2003 .

[28]  Lorinda Wu,et al.  Electrical defects introduced during high-temperature irradiation of GaN and AlGaN , 2003 .

[29]  John M. Zavada,et al.  Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction , 2003 .

[30]  R. Dudek,et al.  Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes , 2004, IEEE Transactions on Nuclear Science.

[31]  K. Baik,et al.  Changes in electrical and optical properties of p-AlGaN due to proton implantation , 2004 .

[32]  Oleg Mitrofanov,et al.  Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy , 2004 .

[33]  S. Denbaars,et al.  AlGaN/GaN polarization-doped field-effect transistor for microwave power applications - eScholarship , 2004 .

[34]  peixiong zhao,et al.  Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers , 2004, IEEE Transactions on Nuclear Science.

[35]  R. Wilkins,et al.  The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors , 2004, IEEE Transactions on Nuclear Science.