AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
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J. Kim | F. Ren | S. Pearton | C. Abernathy | R. Mehandru | R. Birkhahn | B. Peres | R. Fitch | J. Gillespie | A. Crespo | B. Gila | T. Jenkins | J. Sewell | D. Via | B. Luo | D. Gotthold | A. Onstine | S. Pearton | J. Kim