论文信息 - Radiation-induced defects in Czochralski-grown silicon doped with germanium

Radiation-induced defects in Czochralski-grown silicon doped with germanium

The formation of vacancy‐oxygen complexes (A centers) in Czochralski (Cz)‐grown silicon (Cz‐Si) with Ge content of 1018–1020 cm−3 due to gamma irradiation was studied by deep level transient spectroscopy and Hall effect measurements. It was found that the A centers are not formed at the beginning of gamma irradiation and can be developed afterward only. In this case, the formation of A centers in irradiated Cz‐Si:Ge is thought to be a result of annealing of specific radiation induced defects.

V. V. Emtsev | K. Schmalz

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