Radiation-induced defects in Czochralski-grown silicon doped with germanium
暂无分享,去创建一个
[1] C. Kaneta,et al. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal , 1992, Physical review. B, Condensed matter.
[2] V. V. Emtsev,et al. On the A-Centre Formation in Heat-Treated Cz-Silicon , 1990 .
[3] V. V. Emtsev,et al. Effects of oxygen clustering at 600 °C on the annealing of A‐centers in Cz silicon , 1989 .
[4] V. V. Emtsev,et al. An effect of oxygen content on electrical properties of donor centres formed in cz-silicon at 600°C , 1989 .
[5] Moses T. Asom,et al. Interstitial Defect Reactions in Silicon , 1987 .
[6] H. Grimmeiss. Electronic Defect Characterization , 1985 .
[7] A. Mircea,et al. Detailed electrical characterisation of the deep Cr acceptor in GaAs , 1980 .
[8] G. D. Watkins,et al. Negative-U Properties for Point Defects in Silicon , 1980 .
[9] G. D. Watkins. Defects in irradiated silicon: EPR of the tin-vacancy pair , 1975 .
[10] G. D. Watkins,et al. Radiation effects in semiconductors , 1971 .
[11] G. D. Watkins. A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper , 1969 .