0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
暂无分享,去创建一个
Alain Chantre | Daniel Gloria | Pascal Chevalier | Nathalie Revil | Nicolas Loubet | Nicolas Derrier | Samuel Boret | Alain Margain | Malick Diop | Germaine Troillard | GrÉgory Avenier | Julien Bouvier | Linda Depoyan | Michel Buczko | CÉdric Leyris | SÉbastien Montusclat | SÉbastien Pruvost | Sean T. Nicolson | Kenneth H. K. Yau | Didier Dutartre | Sorin P. Voinigescu | D. Dutartre | S. Pruvost | P. Chevalier | G. Troillard | A. Chantre | D. Gloria | N. Loubet | C. Leyris | S. Voinigescu | N. Revil | N. Derrier | G. Avenier | S. Boret | M. Buczko | K. Yau | S. Montusclat | S. Nicolson | A. Margain | L. Depoyan | M. Diop | Julien Bouvier
[1] P. Chevalier,et al. 0.13μm SiGe BiCMOS technology for mm-wave applications , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[2] P. Chevalier,et al. 300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity , 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
[3] A. Tomkins,et al. Circuit performance characterization of digital 45-nm CMOS technology for applications around 110 GHz , 2008, 2008 IEEE Symposium on VLSI Circuits.
[4] P. Garcia,et al. Low Noise Low Cost Rx Solutions for Pulsed 24GHz Automotive Radar Sensors , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
[5] I. Sarkas,et al. W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped I-Q phase shifters , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.
[6] D. Knoll,et al. SiGe BiCMOS Technology with 3.0 ps Gate Delay , 2007, 2007 IEEE International Electron Devices Meeting.
[7] Yves Rolain,et al. A 57-to-66GHz quadrature PLL in 45nm digital CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[8] J. D. Burnett,et al. Modeling hot-carrier effects in polysilicon emitter bipolar transistors , 1988 .
[9] D. Celi,et al. From measurement to intrinsic device characteristics: Test structures and parasitic determination , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[10] P. Garcia,et al. A Wideband W-Band Receiver Front-End in 65-nm CMOS , 2008, IEEE Journal of Solid-State Circuits.
[11] J. L. Showell,et al. A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design , 1997 .
[12] T. Kleinpenning,et al. Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors , 1994, ESSDERC '94: 24th European Solid State Device Research Conference.
[13] P. Chevalier,et al. A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset , 2008, IEEE Transactions on Microwave Theory and Techniques.
[14] M. Khater,et al. A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.
[15] Pascal Chevalier,et al. Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride , 2008, Microelectron. Reliab..
[16] P. Chevalier,et al. High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges , 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
[17] Katsuyoshi Washio. DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs , 2008 .
[18] T. Yao,et al. SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..