InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition
暂无分享,去创建一个
James S. Harris | Chi On Chui | Donghun Choi | Wilman Tsai | Prashant Majhi | C. O. Chui | J. Harris | P. Majhi | W. Tsai | N. Goel | Niti Goel | D. Choi
[1] D. B. Jackson,et al. Thermally generated electron traps in boron‐implanted, phosphorus‐doped silicon , 1985 .
[2] Y. J. Lee,et al. Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3 , 2005 .
[3] Luigi Colombo,et al. Integrity of hafnium silicate/silicon dioxide ultrathin films on Si , 2002 .
[4] D. Murphy,et al. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films , 1999 .
[5] David A. Muller,et al. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition , 2005 .
[6] Hang-Ting Lue,et al. An improved two-frequency method of capacitance measurement for SrTiO 3 as high-k gate dielectric , 2002 .
[7] M. Passlack,et al. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy , 1996 .
[8] I. Lindau,et al. New and unified model for Schottky barrier and III–V insulator interface states formation , 1979 .
[9] Hong,et al. Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation , 1999, Science.