White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
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Michael Dudley | Wei Huang | Shaoping Wang | C H Carter | V F Tsvetkov | C. Carter | M. Dudley | V. Tsvetkov | Wei Huang | C. Fazi | C Fazi | Shaoping Wang
[1] A. R. Lang,et al. On giant screw dislocations in ZnS polytype crystals , 1971 .
[2] B. Tanner,et al. Dislocation contrast in X‐ray synchrotron topographs , 1977 .
[3] P. Ivanov,et al. Recent developments in SiC single-crystal electronics , 1992 .
[4] C. Carter,et al. Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography , 1993 .
[5] V. Tsvetkov,et al. General principles of growing large-size single crystals of various silicon carbide polytypes , 1981 .
[6] M. Hart. Synchrotron radiation – its application to high‐speed, high‐resolution X‐ray diffraction topography , 1975 .
[7] G. Ziegler,et al. Single crystal growth of SiC substrate material for blue light emitting diodes , 1983, IEEE Transactions on Electron Devices.
[8] J. Takahashi,et al. Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane , 1994 .
[9] H. Klapper. The influence of elastic anisotropy on the X-ray topographic image width of pure screw dislocations , 1975 .
[10] A. R. Lang,et al. An optical and X-ray topographic study of giant screw dislocations in silicon carbide , 1985 .
[11] F. Frank. Capillary equilibria of dislocated crystals , 1951 .
[12] C. Fazi,et al. Investigation of Filamentation Damage Resulting from Electromagnetic Breakdown in Si Bi-Polar Diodes , 1993 .
[13] A. Authier. Étude de la distribution des déformations observables sur les topographies par rayons X de cristaux presque parfaits , 1966 .