A 100ns 256K CMOS EPROM

This paper will cover a 256K CMOS EPROM with a 400ns access time achieved by use of address transition detection. Redundancy is implemented with metal-covered EPROM cells.

[1]  A.C. Folmsbee.  PROM Cell made with an EPROM process , 1983, 1983 International Electron Devices Meeting.

[2]  M. Van Buskirk,et al.  A 200ns 256k HMOSII EPROM , 1983, 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.