论文信息 - Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer - 字舞流文

Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer

E. Monroy | Y. Désières | C. Bougerol | E. Robin | J. Gerard | H. Machhadani | S. Lequien | J. Thomassin | N. Mollard | R. Souil | G. Rodriguez | S. Olivier | Raouia Rhazi