An 850 mW X-Band SiGe power amplifier

An 850 mW SiGe power amplifier operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB of gain and 18% PAE is presented. This SiGe PA was implemented in a commercially-available, third-generation 130 nm 200 GHz SiGe BiCMOS platform using a hybrid high-breakdown / high-speed cascode pair to enhance voltage swing.

[1]  J. Laskar,et al.  Experimental study and modeling of microwave bond wire interconnects , 2000, IEEE Antennas and Propagation Society International Symposium. Transmitting Waves of Progress to the Next Millennium. 2000 Digest. Held in conjunction with: USNC/URSI National Radio Science Meeting (C.

[2]  R. Krithivasan,et al.  Half-terahertz operation of SiGe HBTs , 2006, IEEE Electron Device Letters.

[3]  J.D. Cressler,et al.  A High-Gain, Two-Stage, X-Band SiGe Power Amplifier , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[4]  Qingqing Liang,et al.  Reliability issues associated with operating voltage constraints in advanced SiGe HBTs , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..