论文信息 - Analysis of the effect of boron doping on GeTe Phase Change Memories

Analysis of the effect of boron doping on GeTe Phase Change Memories

For the first time, we evaluate the electrical behavior of boron doped GeTe Phase-Change Memories (PCM). Our results demonstrate 25% RESET current reduction and excellent resistance contrast between SET and RESET states with B doping. A further benefit of controlled SET dynamics makes it favorable for MLC applications. Finally, we demonstrate that boron doped GeTe phase change materials maintain good device endurance reliability.

[1] Fuxi Gan,et al. Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power , 2011 .

[2] P. Zuliani,et al. Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[3] B. Rajendran,et al. Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory , 2008, 2008 IEEE International Electron Devices Meeting.

[4] Carl Schell,et al. Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention , 2010, IEEE Electron Device Letters.

[5] A. Toffoli,et al. Electrical Behavior of Phase-Change Memory Cells Based on GeTe , 2010, IEEE Electron Device Letters.

[6] A. Cabrini,et al. Effects of Alloy Composition on Multilevel Operation in Self-Heating Phase Change Memories , 2011, 2011 3rd IEEE International Memory Workshop (IMW).

[7] A. Toffoli,et al. Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications , 2011 .

[8] H.J. Borg,et al. Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization , 2000, 2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491).