论文信息 - Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

We report on the fabrication and characterization of low dark-current GaN metal–semiconductor–metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes.

[1] M. Razeghi,et al. High-quality visible-blind AlGaN p-i-n photodiodes , 1999 .

[2] G. de Cesare,et al. Thin-film photodetectors for the vacuum ultraviolet spectral region. , 1997, Applied optics.

[3] Laurence W. Cahill. Techniques for the design and simulation of interdigitated MSM photodetectors , 1997, Photonics West.

[4] E. Monroy,et al. Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes , 1999 .

[5] Joe C. Campbell,et al. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN , 1998 .

[6] S. M. Sze,et al. Current transport in metal-semiconductor-metal (MSM) structures , 1971 .

[7] Pierre Gibart,et al. Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes , 2000 .

[8] Bernard Beaumont,et al. METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS , 1999 .

[9] Kazuyuki Tadatomo,et al. Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation , 2001 .

[10] Jean-François Hochedez,et al. Diamond UV detectors for future solar physics missions , 2001 .

[11] E. Muñoz,et al. AlGaN metal–semiconductor–metal photodiodes , 1999 .