Adsorption of H2S on InP(001) studied by photoemission spectroscopy
暂无分享,去创建一个
N. Sanada | M. Shimomura | J. Nerlov | P. J. Møller | Y. Fukuda | Q. Guo | S. Christensen
[1] ller,et al. Surface structures and electronic states of H2S‐treated InP(001) , 1996 .
[2] D. R. Lloyd,et al. H2S adsorption on the (110) surfaces of III–V semiconductors , 1995 .
[3] N. Sanada,et al. Spectroscopic evidence for reduction of unoccupied states in the band gap of GaP(001) by H2S passivation , 1994 .
[4] N. Sanada,et al. (NH4)2Sx‐treated InP(001) studied by high‐resolution x‐ray photoelectron spectroscopy , 1994 .
[5] V. Polyakov,et al. Electronic effects of surface In atoms at clean and hydrogenated InP(100)4×2 surfaces , 1994 .
[6] W. Ranke,et al. The structure-sensitive adsorption of H2O and H2S on flat and stepped Si(001) surfaces , 1990 .
[7] W. Göpel,et al. Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface , 1990 .
[8] W. Ranke,et al. Adsorption of H2S and H2O on a cylindrical Ge sample , 1987 .
[9] Xun Wang,et al. A missing-row dimer model of InP(100) (4×2) reconstruction as proposed by LEED, UPS and HREELS studies , 1987 .