Transient photoreflectance of AlInN/GaN heterostructures
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[1] M. Shur,et al. Photoexcited carrier dynamics in AlInN/GaN heterostructures , 2012 .
[2] M. Shur,et al. Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire , 2011 .
[3] Michael S. Shur,et al. Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy , 2011 .
[4] M. Shur,et al. High current-induced degradation of AlGaN ultraviolet light emitting diodes , 2011 .
[5] Eric Feltin,et al. Stress-modulated composition in the vicinity of dislocations in nearly lattice matched Al x In 1 − x N/GaN heterostructures: A possible explanation of defect insensitivity , 2011 .
[6] Michael S. Shur,et al. Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes , 2010 .
[7] S. Denbaars,et al. Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy , 2010 .
[8] A. Cavallini,et al. Indium segregation in AlInN/AlN/GaN heterostructures , 2010 .
[9] R. H. Jansen,et al. Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN , 2010 .
[10] Saulius Marcinkevicius,et al. Time-resolved luminescence studies of proton-implanted GaN , 2009 .
[11] T. Suski,et al. Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys , 2009 .
[12] Yoichi Kawakami,et al. Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra , 2008 .
[13] X. Liu,et al. Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures , 2008 .
[14] Jeremy J. Baumberg,et al. Current status of AlInN layers lattice-matched to GaN for photonics and electronics , 2007 .
[15] Uwe Rossow,et al. Localized high-energy emissions from the vicinity of defects in high-efficiency Ga x In 1-x N/GaN quantum wells , 2005 .
[16] Chang Sub Kim,et al. Femtosecond pump-probe spectroscopy of propagating coherent acoustic phonons in In x Ga 1-x N/GaN heterostructures , 2003, cond-mat/0310654.
[17] Satoshi Kamiyama,et al. Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy , 2003 .
[18] J. Coutaz,et al. Be-doped low-temperature-grown GaAs material for optoelectronic switches , 2002 .
[19] Hongen Shen,et al. Femtosecond studies of fundamental materials issues in III-nitride ultraviolet photodetectors , 2002, SPIE OPTO.
[20] Isamu Akasaki,et al. Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy , 2000 .
[21] J. Coutaz,et al. Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs , 1999 .
[22] U. Keller,et al. Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide , 1996 .
[23] Richard A. Soref,et al. Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .