The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact
暂无分享,去创建一个
F. Craciunoiu | A. Dinescu | M. Kusko | F. Draghici | M. Danila | R. Pascu | A. Dinescu | F. Draghici | F. Craciunoiu | M. Kusko | M. Danila | R. Pascu
[1] G. Chung,et al. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers , 2003 .
[2] C. Buttay,et al. Thermal Stability of Silicon Carbide Power Diodes , 2012, IEEE Transactions on Electron Devices.
[3] A. Dinescu,et al. High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination , 2011, CAS 2011 Proceedings (2011 International Semiconductor Conference).
[4] Sanjeev K. Gupta,et al. Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode , 2011 .
[5] J. Williams,et al. Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures , 2007 .
[6] V. R. Reddy,et al. Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes , 2012 .
[7] Bruno Allard,et al. State of the art of high temperature power electronics , 2009 .
[8] Zhang Yuming,et al. Investigation of current transport parameters of Ti/4H SiC MPS diode with inhomogeneous barrier ⁄ , 2011 .
[9] S. Doğan,et al. The effects of the temperature and annealing on current-voltage characteristics of Ni/n-type 6H-SiC Schottky diode , 2008 .
[10] H. Mantooth,et al. Power Conversion With SiC Devices at Extremely High Ambient Temperatures , 2007, IEEE Transactions on Power Electronics.
[11] An industrial temperature probe based on SiC diodes , 2010, CAS 2010 Proceedings (International Semiconductor Conference).