论文信息 - Schottky Barrier Diode Fabricated on Single Crystal β-Ga2O3 Semiconductor

Schottky Barrier Diode Fabricated on Single Crystal β-Ga2O3 Semiconductor

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal  -Ga 2 O 3 semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a 2 μ m Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of 1.26 m Ω · cm 2 , and forward current densities of 77 A/cm 2 at 1 V and 473 A/cm 2 at 1.5 V, which proved the potential for use in power device fabrication.

Kim Hyun-Seop | Jo Mingi | Cha， Ho-Young

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