Effect of Stress and Measurement Conditions in Determining the Reliability of SiC Power MOSFETs
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Aivars J. Lelis | Daniel B. Habersat | A. Lelis | D. Habersat | R. Green | R. Green | Mooro El | M. El
[1] Peter Friedrichs,et al. Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides , 2010 .
[2] Patrick M. Lenahan,et al. An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors , 2011 .
[3] Andre Stesmans,et al. Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation , 2003 .
[4] Ronald Green,et al. High-Temperature Reliability of SiC Power MOSFETs , 2011 .
[5] H. E. Boesch,et al. The nature of the trapped hole annealing process , 1989 .