In situ control of the growth of GaAs / GaAlAs structures in a metalorganic vapour phase epitaxy reactor by laser reflectometry

[1]  R. Kuszelewicz,et al.  In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm , 1993 .

[2]  Peter Goodhew,et al.  Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity , 1992 .

[3]  Rajaram Bhat,et al.  Optically monitoring and controlling epitaxial growth , 1992 .

[4]  J. V. Armstrong,et al.  Dynamic optical reflectivity to monitor the real‐time metalorganic molecular beam epitaxial growth of AlGaAs layers , 1991 .

[5]  P. D. Dapkus,et al.  In situ laser reflectometry applied to the growth of Al/sub x/Ga/sub 1-x/As Bragg reflectors by metalorganic chemical vapour deposition , 1991 .

[6]  A. Springthorpe,et al.  Epitaxial growth rate measurements during molecular beam epitaxy , 1990 .

[7]  T. Makimōto,et al.  In Situ Optical Monitoring of the GaAs Growth Process in MOCVD , 1990 .

[8]  W. T. Moore,et al.  In situ growth rate measurements during molecular beam epitaxy using an optical pyrometer , 1989 .

[9]  D. Aspnes.  Reflectance-difference spectroscopy: a new probe of crystal growth by MBE and OMCVD , 1989 .

[10]  R. Azoulay,et al.  MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices , 1986 .

[11]  Rajaram Bhat,et al.  Optical properties of AlxGa1−x As , 1986 .

[12]  S. Adachi.  GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[13]  J. S. Blakemore.  Semiconducting and other major properties of gallium arsenide , 1982 .

[14]  J. Theeten,et al.  Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE system , 1979 .

[15]  R. Azoulay,et al.  Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs , 1991 .