Manufacturing Process of Flat Display

A large size display for entertainment, internet, PC and other information instruments is key tool for coming IT revolutionary era, so that the large size display must be characterized by very low electric power consumption and human friendly performance without tiring user's eyes. Thus, liquid crystal (LC) and electroluminescence (EL) displays are candidates for this target. High quality poly-silicon TFT is essentially required even for LCD displays instead current amorphous Si TFT, because very large current drivability is necessary for TFT due to the increase of LCD cell capacitor with an increase of display size up to 50 inches and beyond. The key issue for this target is a creation of very low temperature poly-Si TFT manufacturing technology without excimer laser annealing and very low cost manufacturing which is characterized by very simplified display structures and very simplified manufacturing steps based on very drastic progress of various relating materials and components such as backlights, polarizer, color filter, and etc.

[1]  M. Hirayama,et al.  Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density krypton plasma , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  T. Ohmi,et al.  Low-temperature growth (400/spl deg/C) of high-integrity thin silicon-oxynitride films by microwave-excited high-density Kr-O/sub 2/-NH/sub 3/ plasma , 2002, IEEE Transactions on Plasma Science.

[3]  Yukio Hayakawa,et al.  High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma , 2003 .

[4]  T. Ohmi,et al.  Thin inter-polyoxide films for flash memories grown at low temperature (400/spl deg/C) by oxygen radicals , 2001, IEEE Electron Device Letters.

[5]  T. Ohmi,et al.  A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region , 2003 .

[6]  T. Ohmi,et al.  [100] and [111] Si MOS transistors fabricated with low growth temperature (400/spl deg/C) gate oxide by Kr/O/sub 2/ microwave-excited high-density plasma , 2001 .

[7]  T. Ohmi,et al.  Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[8]  Richard H. Friend,et al.  Current Status and Future of Light Emitting Polymer Display driven by Poly‐Si TFT , 1999 .

[9]  T. Ohmi,et al.  Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).