High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy
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M. Pessa | P. Savolainen | M. Pessa | H. Asonen | R. Murison | P. Savolainen | R. Murison | M. Toivonen | H. Asonen | M. Toivonen
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